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TriQuint Semiconductor, Inc. Product Details for Transistors

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• 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at...
• 0.5 um gate finger length • Nominal Pout of 6.0 Watts at 2.3 GHz • Nominal PAE of 54.5% at 2.3 GHz • Nominal Gain of 12.7 dB at...
Features For frequencies up to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT 26.5 dBm typical at VD=3V, f=1.8GHz High efficiency: better...
Features For frequencies up to 3 GHz Wide operating voltage range: 2 to 6 V POUT 23.5 dBm typical at VD=3V, f=1.8GHz High efficiency: better...
Exceptional Instantaneous band-width performance.
Key Features and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source...
Straightforward linearization using typical Digital Pre-Distortion (DPD) techniques.
Suitable for high reliability applications.
The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced
The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced
The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global sys- tem for mobile communication (GSM), enhanced data for global evolution (EDGE),...
The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power tran- sistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communi- cation...
The AGR09090EF is a high-voltage, gold-metalized, lat- erally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile com munication (GSM), enhanced data for global evolution
The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced
The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suit- able for global system for mobile communication (GSM), enhanced data for...
The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suit- able for global system for mobile communication (GSM), enhanced data for...
The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global
The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global sys- tem for mobile communication (GSM), enhanced data for global evolution (EDGE),...
The AGR18125E is a 125 W, 26 V, N-channel gold- metallized, laterally diffused metal oxide semicon- ductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile...
The AGR19045EF is a 45 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for per- sonal communication service (PCS) (1930 MHz—
The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for per- sonal communication service (PCS) (1930 MHz—
The AGR19125E is a 125 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990...
The AGR19180EF is a 180 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base...
The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suit- able for wideband code division multiple access (W-CDMA), single and multicarrier class AB...
The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base...
The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suit- able for wideband code division multiple access (W-CDMA), single and multicarrier class...
The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suit- able for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for...
The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suit- able for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for...
The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suit- able for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for...
The PD21120R6 is a 120–watt, internally matched LDMOS FET in- tended for WCDMA applications from 2110 to 2170 MHz. This device typi- cally operates at 48% efficiency (P-1dB) and 14...
The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor ( 2.3GHz - 2.5GHz Class AB wireless base station LDMOS) RF power transistor suitable for amplifier applications. This device...
The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor 2.5GHz - 2.7GHz Class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology,...
The PDL400 is a high-voltage, gold metalized laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for applications This device is manufactured on an advanced LDMOS technology, offering state-of-the-art...
The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear...
The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.The device...
The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.25um GaN production process. This process...
The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process. This process...
The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process. This process...
The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-20 is designed using TriQuint’s proven 0.25um GaN production process. This process...
TriQuint offers a complete portfolio of GaAs MMICs as well as standard IF filters for a wide array of base station, mobile handset and wireless applications. TriQuint devices are designed...
Features 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz
Features 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE...
Features Frequency Range: DC - 12 GHz >30 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC - 12 GHz >33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC - 12 GHz >36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC - 12 GHz >39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC - 12 GHz >42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC - 20 GHz >28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power...
Features Frequency Range: DC - 20 GHz >31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power...
Features Frequency Range: DC - 20 GHz >34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3 13 dB Nominal Power...
Features Frequency Range: DC - 20 GHz >37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3 13 dB Nominal Power...
Features Frequency Range: DC - 20 GHz >38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high...
Features Frequency Range: DC-4 GHz(Nominal 900 MHz Application Board Performance) TOI: 44 dBm 31 dBm Psat, 30 dBm P1dB Gain: 18 dB
Features Frequency Range: DC-5 GHz(Nominal 900 MHz Application Board Performance) TOI: 40 dBm 28 dBm Psat, 27 dBm P1Db Gain: 19 dB
Features Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5...
Features Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz

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  • Company Description:
    TriQuint Semiconductor designs and manufactures innovative, high-performance RF solutions for communications companies building mobile device, 3G/ 4G cellular base station, WLAN, cable TV, microwave, optical and defense / aerospace applications.  We are a global, award-winning provider offering... (more)