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2N6670
American Microsemiconductor, Inc.

RF Power Amp Transistor - fT > 300 MHz, Germanium, Transistors [See More]

  • Polarity: NPN
  • Transistor Type / Technology: MOSFET RF
  • Package Type: TO-202
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25M7740 [BFG235 from Infineon Technologies Corporation]
Newark / element14

; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:5.5GHz; Power Dissipation Pd:2W; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:SOT-223; Collector Base Voltage:25V [See More]

  • Polarity: NPN
  • Transistor Type / Technology: Bipolar RF
  • Package Type: SOT223
  • TJ: -65.00 to 150