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RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Supplier: Avago Technologies
Description: Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT tech- nology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has built-in LO buffer amplifier which requires -3 dBm LO power
- Converter Type: Upconverter / Downconverter
- Applications: Mobile / Wireless Systems
- Technology: Other
- Form Factor: IC Chip
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Supplier: TriQuint Semiconductor, Inc.
Description: Features For frequencies up to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT 26.5 dBm typical at VD=3V, f=1.8GHz High efficiency: better than 55 % Low Cost Typical Applications Power Amplifiers for WLAN transceivers Driver Amplifiers for WLAN or mobile phone basestations Power amplifier for mobile phones
- Technology: Other
- Package Type: SOT223
- Packing Method: Tape Reel
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Supplier: Solid Signal
Description: The TDA-35 series features state of the art, GaAs-Fet Push Pull Hybrids, for improved performance, higher output levels, and better distortion characteristics. ● GaAs-Fet Push Pull Hybrid ● 36 dB Gain ● 1000 MHz Bandwidth
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Supplier: ValueTronics International, Inc.
Description: ECL GaAs MOS: CMOS; FastCMOS; BiCMOS; TTL Component Design/Characterization Amplitude levels Aberrations Propagation Delay and Timing Bandwidths and Rise Times Educational Research Manufacturing Engineering and Test
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Supplier: Skyworks Solutions, Inc.
Description: The AS186-302 is a GaAs FET IC SPDT non-reflective switch packaged in a MSOP-8 exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical.Typical applications include
- Actuator Type: SPDT
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Description: • Optical Networking • Noise Sensitive Circuitry • GaAs FET Gate Bias • Video Amplifiers
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features 65 ps Impulse FWHM) ±8 V Adjustable Amplitude 1 MHz Repetition Rate ±5 V Baseline Offset Adjustment Low Jitter, 1.5 ps RMS Applications Laser Diode Drivers GaAs FET and IC Research Impulse Response Testing of Various Instruments and Networks
- Device Type: Generator
- Form Factor: Portable / Benchtop
- Generator Type: Pulse
- User Interface: Front Panel and Display
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Supplier: Transtector Systems, Inc.
Description: Filtered and grounded coaxial protection for GaAs FET receivers and low powered transmitters. Wide bandwidth and multi-strike capability.
- Device Type: Coaxial Surge Suppressors
- Technology: Gas Tube
- Mounting: In-Line / Integrally Attached
- Applications: Other
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Supplier: PolyPhaser Corporation
Description: Filtered and grounded coaxial protection for GaAs FET receivers and low powered transmitters. Wide bandwidth and multi-strike capability.
- Device Type: Coaxial Surge Suppressors
- Technology: Gas Tube
- Mounting: In-Line / Integrally Attached
- Applications: Other
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Supplier: Micronetics, Inc.
Description: The SM1025-36DMQ2 is a GaAs FET amplifier designed for various military and commercial applications. This small size, high efficiency module is well suited for applications such as COFDM video and C2 links in UAVs and in portable, batterypowered transmitters. It comes packaged in a weatherproof
- Product Category: Power Amplifier / SSPA
- Mounting: Stand Alone
- Connectors / Interfaces: SMA
- Features: Integrated Heatsink
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Skyworks Solutions, Inc.
SKY13366-378LF 2.0–6.0 GHz GaAs SPDT SwitchThe switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual (MLPD) package. Positive voltage control (0 and 1.8 V to 0 and 5.0 V). Broadband frequency range: 2.0-6.0 GHz. Very low insertion loss, 0.35 dB typical @ 2.45 GHz. High isolation, 24 dB typical @ 2.45 GHz. Excellent linearity performance, IP0.5dB = +30 dBm. Ultra-miniature, QFN (6-pin, 1 x 1 mm) package (MSL1, 260 °C per JEDEC J- STD-020) (read more)
Browse RF Switches Datasheets for Skyworks Solutions, Inc. -
Skyworks Solutions, Inc.
SKY13350-385LF 0.8–6.0 GHz GaAs SPDT SwitchThe SKY13350-385LF is a GaAs pHEMT FET single-pole, doublethrow (SPDT) switch. The switch may be used in transmit/receive applications by connecting the RF common port (INPUT, pin 6) to either the OUTPUT1 or OUTPUT2 port (pin 2 or 4, respectively) using a low loss path (i.e., a positive voltage applied to either VCTL1 or VCTL2 pins). The switch is "reflective short" on the isolated port. The switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual... (read more)
Browse RF Switches Datasheets for Skyworks Solutions, Inc. -
TriQuint Semiconductor, Inc.
TQBiHEMT GaAs Foundry ProcessTQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQBiHEMT.pdf (read more)
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TriQuint Semiconductor, Inc.
TQP13-N GaAs Foundry ProcessBuilding high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more)
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Avago Technologies
GaAs MMIC Low Noise Amplifier (LNA)Avago Technologies' MGA-13316 is a two stage, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The MGA-13316 LNA has low noise with good input return loss and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. View Data Sheet (PDF). CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION (read more)
Browse RF Amplifiers Datasheets for Avago Technologies -
Omron Electronic Components LLC
MOS FET RelaysMOS FET Relays from Omron Electronic Components LLC. Perfectly suited for Automated Test Equipment, Medical Equipment, Instrumentation, Security Equipment, Automated Meter Reading, Automotive Diagnostic Equipment, and Communications. Available in 1 and 2-Pole configurations in PCB, SMT, DIP, SOP, and SSOP packaging. Other options include current limiting, high dielectric voltage withstand, normally open and normally closed contact forms, high voltage and current load handling, and high-speed... (read more)
Browse Solid State Relays Datasheets for Omron Electronic Components LLC -
Linear Integrated Systems, Inc.
High Speed (2ns), Single, DMOS FET SwitchSST210/SD210DE, SST211/SD211DE, SST213/SD213/DE, SST214/SD214DE, SST215/SD215DE - High Speed (2ns), N-Channel Enhancement Mode, Surface Mount, Single, Lateral DMOS FET Switch. Features: Ultra Fast Switching (ton=2ns typ). Low Capacitance (crss= 0.5pf max). Switches Analog Signals up to +/- 10 volts. Designed for High Frequency RF operation. ESD Protection Diodes Versions SST211, SST213, SST215, SD211DE, SD213DE, SD215DE. Non-ESD Protection Diodes Versions SST210, SST214, SD210DE, SD214DE... (read more)
Browse IC Analog Switches Datasheets for Linear Integrated Systems, Inc. -
Texas Instruments High-Performance Analog
Phase Dimmable Offline LED Driver with Int. FETThe LM3448 is an adaptive constant off-time AC/DC buck(step-down) constant current LED regulator designed to becompatible with TRIAC dimmers. The LM3448 provides aconstant current for illuminating high power LEDs and includesa phase angle dim decoder. Order a Sample (read more)
Browse LED Drivers Datasheets for Texas Instruments High-Performance Analog -
American Microsemiconductor, Inc.
Junction Field Effect Transistor J-FET from AMSThe J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is, a small change in input voltage causes a large change in output current. FET operation involves an electric field which controls the flow of a charge (current) through the device. In contrast with J-FET, a bipolar transistor employs a small input current to control a large output current.The source, drain, and gate terminal of the FET are analogous to the emitter, collector, and base of a bipolar transistor... (read more)
Browse Junction Field-Effect Transistors (JFET) Datasheets for American Microsemiconductor, Inc. -
Linear Integrated Systems, Inc.
High Speed (2ns), SMT, Quad, DMOS FET SwitchSD5400CY & SD5401CY - High Speed (2ns), N-Channel Enhancement Mode, Surface Mount, Monolithic Quad, Lateral DMOS FET Switch. Features: Ultra Fast Switching (ton=2ns typ). Low Capacitance (crss= 0.5pf max). Switches Analog Signals up to +/- 10 volts. Designed for High Frequency RF operation. ESD protection Diodes. Monolithic Quad. Available in SOIC 14 & 16 lead packages. Also available in Tested Die, PDIP and Sidebraze 16 lead packages. Available with special testing to customer specification... (read more)
Browse IC Analog Switches Datasheets for Linear Integrated Systems, Inc.
Parts by Number for gaas FET Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| KGF1256 GaAs fet | Arrowhead Electronics | OKI | Not Provided | 93 |
| FHX36LPT/601 GaAs FET FUJITSU | Arrowhead Electronics | Not Provided | Not Provided | Not Provided |
| FLL57MK | ASAP Semiconductor | FUJITSU | Not Provided | FET,GaAs,P(1dB)=36dBm,F=.5-5GHz,G=11.5dB |
| FLM71798F | E-Electronics | Not Provided | Not Provided | C BAND INTERNALLY MATCHED GaAs FET FLM 7119 8F 1PC EA BX |
| NE70083 | E-Electronics | Not Provided | Not Provided | 80GHz Ku-K-band Microwave GaAs FET |
Conduct Research Top
Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs FET MMIC Switches and Digital Attenuators...
M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit (ASIC) that drives GaAs Field Effect Transistor (FET) based switches or digital attenuators from a single TTL or compatible IC. These ASICs are available in single (SW-109) or quad-channel (SWD-119...
...to accomplish the driver function. This application note discusses a configuration which allows the user to drive GaAs control devices with standard CMOS logic gates. Although specific examples are presented, this application is generic and can be applied to any GaAs control device. Since the GaAs FET...
This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF circuitry and incorporate application specific integrated circuit (ASIC) technology to realize...
...in some diodes, field-effect transistors (FETs), and integrated circuits (ICs). GaAs components are useful at ultra-high radio frequencies and in fast electronic switching applications. GaAs devices generate less noise than most other types of semiconductor components and, as a result, are useful...
This application note describes a useful broadband technique of temperature compensation for GaAs FET amplifiers. A control circuit is given for use with M/A-COM's dual bias 20 dB attenuator MMIC. Although the transfer function for attenuator control is non-linear, reasonably good results have been...
After some 20+ years of DoD technology development, the commercial wireless market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of the wireless industry have conflicted with the high-performance process needs and longer time-horizon of the defense...
This procedure details the particular procedures required to safely handle GaAs Integrated Circuits in die form manufactured in M/A-COM's P5 semiconductor foundry process. The M/A-COM P5 process does not have air-bridges and includes a 7µm polyimide scratch protection layer on the top surface...
RF bandwidths for cellular systems such as AMPS, TACS, GSM, TDMA, and CDMA range from 800MHz to 1.0GHz. To provide RF transmissions over this range of frequencies, Gallium Arsenide (GaAs) has become the technology of choice and offers several advantages over silicon technology: a much higher cutoff...
M/A-COM is a longtime supplier to the military, Navy, Army and Air Force of GaAs MMICs, employed in active phased array radars. To date, the company's GaAs process of choice has been its Multifunction Self-aligned Gate (MSAGTM) process. MSAG features selective ion implantation with noncontacting...
Engineering Web Search: gaas FET Top
Field-effect transistor - Wikipedia, the free encyclopedia
"FET" redirects here. For other uses, see FET (disambiguation).
Transistor - Wikipedia, the free encyclopedia
Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for
GaAs FET switch model
GaAs FET switch model EDAboard.com Forum Index -> RF, Microwave, Antennas and Optics > GaAs FET switch model
Is there any company produces power GaAs FET or PHEMT ??
Is there any company produces power GaAs FET or PHEMT ??
RF Power GaAs Transistors
RF Power GaAs Transistors Linear Transistors - to 6000 MHz
See Freescale Semiconductor, Inc. Information
Microwave GaAs FET catalogue | Datasheets.org.uk - Datasheets...
transistor microwave uhf microwave fet A008 Microwave GaAs FET catalogue Abstract: .. Primer 4 ? GaAs FET Characteristic s .. Packaged Microwave
Gaas Fet
Gaas Fet Gaas Fet Copyright 2006-2011.
DSpace@MIT : A 8.45 GHz GaAs FET amplifier
A 8.45 GHz GaAs FET amplifier Show full item record A 8.45 GHz GaAs FET amplifier Author: Briancon, Alain Charles Louis.
== Diodes, Inc. ==
GaAs FET bias generators Fixed Bias GeneratorsSwitched Bias Generators GaAs FET bias generators Fixed Bias GeneratorsSwitched Bias Generators
See Zetex Inc. Information
Angle Linear Home Page
PHEMTs have replaced GaAs FET devices. PHEMT (pronounced "P" hemt) = Psuedomorphic High Electron Mobility Transistor.
