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RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Supplier: Logitech, Ltd.
Description: with Logitech polishing pads. Materials that have been successfully polished to within optical standards using SF1 include Silicon, Lithium Niobate, Glass, Quartz, Silicon Carbide, Gallium Nitride and Sapphire. Both SF1 packages are produced at our own purpose built materials processing
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Supplier: Avago Technologies
Description: viewing angle and readability in sunlight is essential.this lamp have very smooth,matched radiation patterns ensuring consistent mixing in full color application,massage uniformity across the viewing angle of the sign. High efficiency LED material is used in this lamp: Indium Gallium Nitride (InGaN
- LED Construction: Edge Emitting
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Supplier: TriQuint Semiconductor, Inc.
Description: TriQuint offers a wide portfolio of gallium nitride (GaN) die-level MMICs and packaged devices developed with our fully-qualified 0.25 µm GaN on SiC process. TriQuint also offers a wide selection of gallium arsenide (GaAs) product solutions as well as SAW and BAW filters for defense
- Amplifier Type: Power Amplifier
- Package Type: Other
- RF Connector: Other
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Supplier: Aeroflex / Metelics
Description: The Aeroflex / Metelics low cost surface mount single and anti-parallel pairs of gallium arsenide Schottky diodes in QFN package 0503 (1.37 x 0.86 mm) can be used through millimeter wave frequencies as they have low capacitance and low resistance. They are passivated with silicon nitride
- Applications: Detector, Mixer
- Life Cycle Stage: Maturity
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Supplier: Logitech, Ltd.
Description: increase system flexibility, repeatability and usability Description The Logitech DP1 is a high speed polishing system designed primarily to process hard materials, such as sapphire, silicon carbide or gallium nitride, to epitaxy ready quality surfaces. Product Specification Power Supply
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Supplier: TriQuint Semiconductor, Inc.
Description: TriQuint offers a wide portfolio of gallium nitride (GaN) die-level MMICs and packaged devices developed with our fully-qualified 0.25 µm GaN on SiC process. TriQuint also offers a wide selection of gallium arsenide (GaAs) product solutions as well as SAW and BAW filters for defense
- Package Type: Other
- Connector: Other
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Supplier: Aeroflex / Metelics
Description: The Aeroflex / Metelics low cost surface mount single and anti-parallel pairs of gallium arsenide Schottky diodes in QFN package 0503 (1.37 x 0.86 mm) can be used through millimeter wave frequencies as they have low capacitance and low resistance. They are passivated with silicon nitride
- Applications: Detector, Mixer
- Life Cycle Stage: Maturity
Featured Products Top
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Advanced Photonix, Inc.®
GaN and SiC UV DetectorsThese UV, Gallium Nitride (GaN) and Silicon Carbide (SiC), sensors are intended for use in the spectral region of 200 nm to 400 nm where maximum quantum efficiency is required at these wavelengths. These devices are more robust in their resistance to UV degradation than traditional silicon photodiodes while providing greater photocurrent at shorter wavelengths. (read more)
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TriQuint Semiconductor, Inc.
TriQuint Opens Industry's 1st GaN Foundry ServiceGaN Foundry TriQuint's gallium nitride (GaN) Foundry is open for wafer starts in September 2008. Dr. Dr. Gailon Brehm, Product Marketing Director for TriQuint encourages companies interested in GaN designs to meet with TriQuint as a step toward production. The new service will target communications applications through the Ku frequency band. GaN-based amplifiers offer inherent advantages compared to other solid-state amplifier technologies including up to 2.5-times the power density of high... (read more)
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Advanced Abrasives Corp.
APol-80 Colloidal SilicaAPol-80 Colloidal Silica is formulated as a soft-drying polish for sapphire, ceramics, silicon carbide, gallium nitride, quartz and other hard substrates. APol-80 Colloidal Silica removes resid-ual metals and particle defects better than conventional silica slurries, mak-ing it the best final polish choice for re-claiming silicon wafers. APol-80 Colloidal Silica dries soft in order to eliminate scratches caused by dried pol-ish, and prevents polish equipment from being encrusted with hardened (read more)
Browse Abrasives and Abrasive Products Datasheets for Advanced Abrasives Corp. -
Logitech, Ltd.
DP1 Precision Polishing MachineThe Logitech DP1 is a high speed polishing system designed primarily to process hard materials, such as sapphire, silicon carbide or gallium nitride, to epitaxy ready quality surfaces. Key Features. Driven head technology dramatically. reduces polishing time for hard materials. Intuitive control panel provides easy access. to range of system features & parameters. Industry standard protocols provides for. improved health & safety features. Automated process recipes increase system... (read more)
Browse Polishing and Buffing Machines Datasheets for Logitech, Ltd. -
Saint-Gobain Surface Conditioning Group
Lapping Vehicle for Sapphire Marketatomically perfect surface which allows the deposition of GaN, Gallium Nitride, the material at the heart of the blue/white laser diode. We also offer a polishing slurry, 92400.20MIC12 Polycrystalline Alumina Slurry for this application. (read more)
Browse Abrasive Compounds and Abrasive Slurries Datasheets for Saint-Gobain Surface Conditioning Group -
TriQuint Semiconductor, Inc.
New GaN 55W Amp Delivers Best-in-Class Linear GainTriQuint's new T1G4005528-FS is a packaged discrete GaN RF power transistor offering best-in-class linear gain: >15dB, >55 Watts of compressed output power and > 50% efficiency (3.5 GHz.) The T1G4005528-FS is ideal for narrow and wideband applications. Since it can utilize a smaller driver in many designs, the T1G4005528-FS delivers 'greener' performance for overall line-up cost savings. It operates at 28V and is available in an earless ceramic package. Power, gain and efficiency can be... (read more)
Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
Avago Technologies
Auto Focus Auxiliary Flash LEDThe Avago ASMT-Fx70 LEDs provide the best of both worlds, as they offer a small design footprint without sacrificing auto-flash performance.". The ASMT-FJ70 devices use Aluminum Indium Gallium Phosphate (AlInGaP) material technology and feature a 12 degree viewing angle, while the ASMT-FG70 devices use Indium Gallium Nitride (InGaN) material technology and provide a 14 degree viewing angle. Both technologies have very high luminous efficiency, producing high light output over a wide range of drive... (read more)
Browse Light Emitting Diodes (LED) Datasheets for Avago Technologies -
Rogue Valley Microdevices, Inc.
Stoichiometric LPCVD Nitride filmRogue Valley Microdevices is proud to be your leading source of high quality LPCVD films. Our Stoichiometric LPCVD Nitride can be a very effective insulator, and works great as a KOH etch mask when deposited over thermal oxide. We also have the in-house capability to design and manufacture Nitride Windows. All of our processing is down in-house in our Class 100 Cleanroom in Medford, Oregon. Rogue Valley Microdevices engineering team can assist customers with the design, process flow... (read more)
Browse Thin Film Coating Services Datasheets for Rogue Valley Microdevices, Inc. -
Saint-Gobain Surface Conditioning Group
Cubic Boron NitrideCubic Boron Nitride, CBN is a high strength crystal, blocky in shape. Grit sizes available 50 / 60 through 325 / 400. This exceptional grain is intended for use on high precision grinding wheels. (read more)
Browse Superabrasives and Diamond Tools Datasheets for Saint-Gobain Surface Conditioning Group -
Rogue Valley Microdevices, Inc.
PECVD Nitride for Semiconductor WafersOur PECVD Nitride can be a great alternative to LPCVD Nitride when it becomes important to stay within lower temperature ranges. Widely used in MEMS and Semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer, or to help balance film stress within a stack. Using PECVD Nitride in addition to PECVD Oxide will help to reduce overall film stress, preventing delaminating and micro-cracking. This is a Semiconductor Grade Single Side Deposition Film... (read more)
Browse Thin Film Coating Services Datasheets for Rogue Valley Microdevices, Inc.
Conduct Research Top
...though, on everything from wafer size, to integration issues, and defect concerns. When dealing with the predominating sapphire and gallium-arsenide (GaAs) substrates and others made from materials such as gallium nitride (GaN) and indium phosphide (InP), Chase learned that the small differences...
The ability to produce high-performance circuits using SiC without significant new investment in cutting-edge fabrication tools is particularly appealing. Table I compares several wide-band-gap materials to silicon. Gallium nitride (GaN) has good mobilities but is hampered by low thermal conductivity...
...on free-standing gallium nitride, the tiny emitters are smaller and more efficient than current diodes, according to researchers. They also have potential uses as alternatives to...
...reported on Nichia Chemical's creation of the first blue light-emitting diode fabricated out of a semiconductor called gallium nitride (GaN). The breakthrough by Shuji Nakamura, a stellar researcher at the small Japanese company, represented a giant leap toward a long-sought goal in optical...
Ultra-high purity ammonia delivered to the point of use is critical for growth of gallium nitride semiconductors. Recent studies have demonstrated that the origin, properties, and fluctuations of impurities are related to starting impurity levels within the cylinder, cylinder usage conditions, type...
...to gallium nitride and other semiconductors is because it is environmentally benign. In fact, ZnO is biologically compatible which makes it especially well suited for potential medical applications. ZnO is transparent at wavelengths in the visible part of the electromagnetic spectrum and opaque...
...not inventor, owns blue LED patent The key patent for gallium nitride-based blue LEDs and laser diodes belongs to Nichia Corp., the Tokyo District Court ruled Thursday (Sept. 19), rejecting a claim by Shuji Nakamura, who invented the technology while working for Nichia. Sun sketches Infiniband plans...
...reported on Nichia Chemical's creation of the first blue light-emitting diode fabricated out of a semiconductor called gallium nitride (GaN). The breakthrough by Shuji Nakamura, a stellar researcher at the small Japanese company, represented a giant leap toward a long-sought goal in optical...
Gallium nitride market to hit $4.5 billion by 2007 The market for gallium nitride devices expected to grow to $4.5 billion by 2007, according to Silicon Valley market research firm Strategies Unlimited Ltd. Ruling bars key material in FTC hearing against Rambus Rambus Inc. on Friday said...
...a Tokyo-wide WiMAX network delivering high-speed IP connectivity and supporting voice, video, and broadband data services. TriQuint wins DARPA contract to develop gallium nitride power amp TriQuint Semiconductor announced Friday it has been awarded a multi-year contract from the Defense Advanced Research...
Engineering Web Search: Gallium Nitride Top
Gallium nitride - Wikipedia, the free encyclopedia
Gallium nitride IUPAC name Gallium nitride
Gallium - Wikipedia, the free encyclopedia
Gallium From Wikipedia, the free encyclopedia For other uses, see Gallium (disambiguation).
Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring...
Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band
See Fujitsu Limited Information
Fujitsu Develops Breakthrough Technology for Low-Cost...
Fujitsu Develops Breakthrough Technology for Low-Cost Production of Gallium-Nitride HEMT
See Fujitsu Limited Information
An unexpected discovery could yield a full spectrum solar cell
With a band gap of 3.4 eV, gallium nitride emits invisible ultraviolet light, but when some of the gallium is exchanged for indium, colors like
gallium nitride - Computer Dictionary Definition
Dictionary Home » Computer Definitions » gallium nitride
Condensed-phase transitions during effusion of gallium...
Enthalpy of formation of gallium nitride A new study investigates the enthalpy of formation of gallium nitride using calorimetric measurement.
ETH Zürich - Eidgenössische Technische Hochschule...
As the new combination of materials has many advantages, gallium nitride is poised to conquer the electronics market.
See ETH Zurich Information
Gallium Nitride
Gallium Nitride Wafers and Aluminum Nitride Metal Deposition * Nitride * Fused Silica * Quartz * Float Zone * Pyrex * Ultra-Thin & Flat Silicon
See University Wafer Information
Gallium Nitride : Eurotechnology: Blue Laser, Gallium-Arsenide...
Sites for: Gallium Nitride Gallium Nitride
