Find Suppliers by Category
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Learn MoreProducts & Services
See also: Featured Products | Parts by Number | Technical Articles | Engineering Web Results-
Supplier: Hirschmann™, A BELDEN BRAND
Description: Cable socket with integrally molded lead (2 m), gasket (captive) and central screw M3 (stainless steel, Phillips cross-head)
- Product Category: Cable Assembly
- Ethernet Type: 10Base-T, 100Base-TX
- Application: Industrial / Instrumentation and Control, Networking
- Gender: Female-Female
-
Supplier: Digi-Key Corporation
Description: LED 5MM GREEN CLEAR 527NM 15DEG
- Color: Green
- LED Construction: Edge Emitting
- Lens Type: Domed Lens
-
Supplier: Lube USA, Inc.
Description: Air operated grease pump
- Lubrication Media: Grease
- Operation: Pneumatic
- Reusable or Single Use?: Reusable
- Application: General Purpose
-
Supplier: TriQuint Semiconductor, Inc.
Description: TriQuint offers a complete portfolio of GaAs MMICs as well as standard IF filters for a wide array of base station, mobile handset and wireless applications. TriQuint devices are designed to meet critical performance standards while offering cost-effective solutions in a highly competitive market.
- Transistor Type / Technology: HEMT
- Package Type: Other
- Transistor Grade / Operating Range: Military, Other
-
Supplier: Marktech Optoelectronics
Description: Round LEDs offer superior light output for excellent readability in sunlight and dependable performance. They provide extremely stable light output over long periods of time. These lamps are made with an advanced optical-grade epoxy offering superior high-temperature and high-moisture-resistance performance in outdoor signal and sign applications.
-
Supplier: Avago Technologies
Description: This product is a high performance, easy to use dot matrix display driven by on-board CMOS IC. Each display can be directly interfaced with a microprocessor, thus eliminating the need for cumbersome interface components. The serial IC interface allows higher character count information displays with a minimum of data lines. The 5x7 pixel format allows the user great freedom to generate user-defined characters. This display is stackable in the x- and y-directions, making it ideal for high character count displays.
- Display Type: Dot Matrix Display
- Characters Displayed: Alphanumeric
- LED Color: Blue
-
Supplier: Cole-Parmer
Description: Gallium(III) nitrate hydrate 99.9998% (5g) Quantity: 5g CAS Number: 13494-90-1 Formula weight: 255.74 Empirical formula: GaN 3O9.xH2O Linear formula: Ga(NO 3)3.xH2O Hazard symbol: Oxidizing, Irritant
-
Supplier: TELOPS, Inc.
Description: The laser scriber performs scribe lines on wafers using a UV pulsed laser in the dicing process. The optimization of laser power and optical components yields the best scribing results on GaN wafers.
- Type: Complete / Turnkey System
- Options / Components: Laser Optics / Beam Delivery, Laser System Enclosure, Other
- Process / Operation: Laser Marking
- Materials Processed: Semiconductors / Electronics
-
Supplier: Logitech, Ltd.
Description: Key Features Driven head technology vastly reduces polishing time for hard materials Process up to 48 x 50mm / 2” Ø wafers or 4 x 200mm / 8” Ø wafers per run Ideal for polishing SiC, GaN, AIN and Sapphire Automated process recipes increase system flexibility
-
Supplier: Allied Electronics, Inc.
Description: LED; Blue; 15 mcd (Typ.) @ 20 mA; 3.2 mm; T-1; 20 mA @ 60 degC; 5 V; GaN on SiC, Small mechanical tolerances Wide viewing angle Very high intensity Luminous intensity categorized ESD class 1
- Color: Blue
Featured Products Top
-
TriQuint Semiconductor, Inc.
Newest GaN devicesTriQuint has four new high-power switches that set a performance standard for solid-state switching-TriQuint's GaN devices handle up to 40W CW input power, a performance level previously available only from electromechanical solutions that are substantially larger, heavier and less efficient. For details, please visit TriQuint's website. TGS2351 DC - 6 GHz High Power GaN SPDT Switch. TGS2351-SM DC - 6 GHz High Power GaN SPDT Switch. TGS2352 DC - 12 GHz High Power GaN SPDT Switch. TGS2353 DC... (read more)
Browse RF Switches Datasheets for TriQuint Semiconductor, Inc. -
Advanced Photonix, Inc.®
GaN and SiC UV DetectorsThese UV, Gallium Nitride (GaN) and Silicon Carbide (SiC), sensors are intended for use in the spectral region of 200 nm to 400 nm where maximum quantum efficiency is required at these wavelengths. These devices are more robust in their resistance to UV degradation than traditional silicon photodiodes while providing greater photocurrent at shorter wavelengths. (read more)
-
Integra Technologies, Inc.
GaN-on-Silicon DevicesIntegra announces the world's first GaN-on-Silicon devices operating at 50 volts. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50. Both devices are single ended and are housed in ceramic flanged packages providing excellent thermal advantages. The devices operate over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz... (read more)
Browse Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
TriQuint Opens Industry's 1st GaN Foundry ServiceGaN Foundry TriQuint's gallium nitride (GaN) Foundry is open for wafer starts in September 2008. Dr. Dr. Gailon Brehm, Product Marketing Director for TriQuint encourages companies interested in GaN designs to meet with TriQuint as a step toward production. The new service will target communications applications through the Ku frequency band. GaN-based amplifiers offer inherent advantages compared to other solid-state amplifier technologies including up to 2.5-times the power density of high... (read more)
-
TriQuint Semiconductor, Inc.
Highly Efficient 18W GaN RF Power TransistorT1G6001528-Q3 - 18W, 28V, DC-6 GHz, GaN RF Power Transistor. The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Features... (read more)
Browse Transistors Datasheets for TriQuint Semiconductor, Inc. -
MITEQ, Inc.
12V Mutli-Octave GaN RF Power AmplifierMITEQ Inc. adds another model to its AMFG family of GaN power amplifiers. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power without compromising their reliability. A severe limitation has been the high voltage requirement that may be incompatible with many existing systems. Quick Links: Information... (read more)
-
TriQuint Semiconductor, Inc.
New GaN 55W Amp Delivers Best-in-Class Linear GainTriQuint's new T1G4005528-FS is a packaged discrete GaN RF power transistor offering best-in-class linear gain: >15dB, >55 Watts of compressed output power and > 50% efficiency (3.5 GHz.) The T1G4005528-FS is ideal for narrow and wideband applications. Since it can utilize a smaller driver in many designs, the T1G4005528-FS delivers 'greener' performance for overall line-up cost savings. It operates at 28V and is available in an earless ceramic package. Power, gain and efficiency can... (read more)
Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
55W GaN Transistor, X-Band 2W PA, GPS-SDARS DiplexTriQuint Semiconductor is featuring three new innovative RF solutions designed to bring greater system performance and efficiency to a variety of markets and applications including radar systems, PtP radio and automotive. 55W GaN RF Power Transistor. T1G4005528-FS Features. Frequency range: DC - 3.5 GHz. Linear gain: >15dB at 3.5 GHz (best in class). Operating voltage: 28V. Output power (P3dB): 55W at 3.5 GHz. Lead-free and RoHS compliant. · Package: 9.7x5.8mm ceramic air cavity flat lead... (read more)
Browse RF Transmitters Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
New RF Solutions Product GuidesTriQuint recently released several new product guides featuring our innovative RF solutions for GaN RF power and optical products. Our latest EMEA Defense & Aerospace product guide highlights our industry-leading portfolio of GaAs, GaN, SAW & BAW devices. (read more)
Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
Kingbright Corporation
0402 SMD LEDKingbright is introducing the smallest, low cost, chip type blue SMD LED to the LED arena. This ultra thin & small 0402 design (1.0mm x 0.5mm x 0.5mm) comes with an GaN blue LED chip which provides the luxury of having blue indication in an application with a fraction of the cost of the tradition blue SMD LED. Kingbright is also extending this cost advantage in blue technology to all other SMD LEDs in our products line. Kingbright's newly introduced 0402 package is available in the full... (read more)
Browse Light Emitting Diodes (LED) Datasheets for Kingbright Corporation
Parts by Number for GAN Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| GAN30023 | ASAP Semiconductor | SOC CORP. | Not Provided | Not Provided |
| GAN3007129 | ASAP Semiconductor | AMPHENOLRF | Not Provided | Not Provided |
| GAN01 | E-Electronics | Not Provided | Not Provided | GAN01 |
| GAN40005 | E-Electronics | Not Provided | Not Provided | GAN40005 |
| GAN30001 | ASAP Semiconductor | SOC CORP. | Not Provided | Not Provided |
Conduct Research Top
GaN-Based Materials and Devices: Growth, Fabrication, Characterization and Performance. Written for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices, this volume addresses the entire spectrum of issues related to nitride materials...
Ultra-high purity ammonia delivered to the point of use is critical for growth of gallium nitride semiconductors. Recent studies have demonstrated that the origin, properties, and fluctuations of impurities are related to starting impurity levels within the cylinder, cylinder usage conditions, type...
...standards meetings, posters, exhibits, and social events. More than 70 presentations will cover general technical themes such as manufacturing, worldwide GaN materials, thin films and dry etch, cost-reduced processing, backside processing, wide bandgap, and high-speed technologies. The plenary session...
The ability to produce high-performance circuits using SiC without significant new investment in cutting-edge fabrication tools is particularly appealing. Table I compares several wide-band-gap materials to silicon. Gallium nitride (GaN) has good mobilities but is hampered by low thermal conductivity...
...though, on everything from wafer size, to integration issues, and defect concerns. When dealing with the predominating sapphire and gallium-arsenide (GaAs) substrates and others made from materials such as gallium nitride (GaN) and indium phosphide (InP), Chase learned that the small differences...
...linear millimeter-wave power amplifiers for point-to-point radio links, millimeter wave switches using GaAs PIN diodes, and combining GaAs HBT, PHEMT, and VPIN technology in a 77-GHz Tx/Rx front-end for automotive radar. Finally, future GaN HEMT technology is showcased by discrete transistors...
...reported on Nichia Chemical's creation of the first blue light-emitting diode fabricated out of a semiconductor called gallium nitride (GaN). The breakthrough by Shuji Nakamura, a stellar researcher at the small Japanese company, represented a giant leap toward a long-sought goal in optical...
...reported on Nichia Chemical's creation of the first blue light-emitting diode fabricated out of a semiconductor called gallium nitride (GaN). The breakthrough by Shuji Nakamura, a stellar researcher at the small Japanese company, represented a giant leap toward a long-sought goal in optical...
...about 250 engineers by the end of 2006, said Paul Struhsaker, vice president of engineering for mobile platforms. GaN helps scientists generate hydrogen from water A research group based in a Tokyo university has succeeded to produce hydrogen using a Gallium Nitride (GaN) device as a photocatalyst...
...startup Pyxis Technology named Warren Grobman, Mark McDermott, David Pan and Riko Radojcic to the company's newly created technical advisory board. GaN helps scientists generate hydrogen from water A research group based in a Tokyo university has succeeded to produce hydrogen using a Gallium Nitride...
Engineering Web Search: GAN Top
Fujitsu Develops GaN HEMT Technology for Next-generation...
Fujitsu Develops GaN HEMT Technology for Next-generation Mobile Phone Base Station Amplifiers
See Fujitsu Limited Information
TriQuint - Process Overview: GaN
GaN Products GaN Foundry Product Search
See TriQuint Semiconductor, Inc. Profile & Catalog
Generic Access Network - Wikipedia, the free encyclopedia
Generic Access Network or GAN is a telecommunication system that extends mobile voice, data and IP Multimedia Subsystem/Session Initiation Protocol
Gallium nitride - Wikipedia, the free encyclopedia
GaN Molar mass 83.73 g/mol Appearance
CREE | RF GaN HEMT MMIC Products
GaN HEMT Chip Products GaN HEMTs for General-Purpose GaN HEMTs for 3G, LTE and WiMAX GaN HEMTs for C-Band & S-Band
See Cree, Inc. Information
Correlating exciton localization with compositional...
exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms
Crhea - GaN
Navigation : présentation > activité > GaN
Crhea - GaN HEMTs AlGaN/GaN
Navigation : présentation > GaN > Hétérostructures HEMTs AlGaN/GaN pour applications hyperfréquences
The first RT CW GaN VCSEL LD and High Efficiency UV and Green...
? Home ? Events ? Events Archive ? 2011 ? The first RT CW GaN VCSEL LD and High Efficiency UV and Green GaN LED's
CONN HEADER ACH SIDE 2POS 1.2MM - BM02B-ACHSS-GAN-TF(LF)(SN)
- Headers, Male Pin Connectors, Interconnect JST Sales America Inc (VA) Header, Shrouded BM02B-ACHSS-GAN-TF(LF)(SN) Connectors, Interconnects
