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Gate drive transformers are used to modify the voltage level to a gate. They also provide impedance matching and voltage isolation.
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Supplier: Newark / element14
Description: INSULATED GATE BIPOLAR TRANSISTOR; DC Collector Current:50A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:179mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
- Package Type: TO-247
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Description: Gate Driver ICs for IGBT VSP Series
- Package Type: Other
- Packing Method: Bulk Pack
- Transistor Grade / Operating Range: Industrial, Military, Automotive
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Supplier: Newark
Description: IMS (Insulated Metal Substrate) Power Modules; Transistor Type:IGBT; Package/Case:IMS-2; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:16A; No. of Pins:13; No. of Transistors:1
- Transistor Type / Technology: IGBT
- Package Type: Other
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Supplier: Renesas Electronics
Description: Transistors, IGBT, for Strobe use
- Transistor Type / Technology: IGBT
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Supplier: Allied Electronics, Inc.
Description: Transistor, IGBT; D-56; IGBT; 300 A; 1200 V; 20 V; 5.5 V (Typ.)
- Transistor Type / Technology: IGBT
- Polarity: N-Channel
- Package Type: Other
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Supplier: Digi-Key Corporation
Description: IGBT 600V 70A 250W TO247
- Package Type: TO-247
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: American Microsemiconductor, Inc.
Description: N-Channel IGBT, Transistors
- Transistor Type / Technology: IGBT
- Polarity: N-Channel
- Package Type: TO-247
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Supplier: Industrial Semiconductor, Inc.
Description: IGBT Module SKM75GB063DN
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Supplier: Innovative Technology
Description: The M-Max Series makes the maximum impact on process with a minimum amount of energy. Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance. In addition, the integrated
Featured Products Top
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Mitsubishi Electric Power Products, Inc.
Insulated Gate Bipolar Transistors (IGBTs)Power Supply systems by Mitsubishi Electric. IGBT - Transistors with Excellent Performance Characteristics. Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs), and now utilizes IGBTs in the converters and inverters of its 9700 Series UPS systems. These advanced, high-performance transistors provide a variety of intelligent features. High Ampacity Transistors (600A). High Speed Switching. Low Control Power. Design Features: IGBT(Converter/Inverter). 1:1... (read more)
Browse Uninterruptible Power Supplies (UPS) Datasheets for Mitsubishi Electric Power Products, Inc. -
Advanced Power Electronics Corp. USA
AP30G120W-3 Insulated Gate Bipolar TransistorFast Insulated Gate Bipolar Transistors (IGBTs) from Advanced Power Electronics Corp. provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. Features: High speed switching. Low saturation voltage. Industry standard TO-3P package. RoHS compliant (read more)
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Silicon Labs
5 kV ISOdriver Isolated Gate Driverssolutions. Supporting gate drive voltages of up to 24 V and peak output current ranging from 0.5 to 4.0 A, the ISOdrivers deliver best-in-class drive strength for both MOSFET and insulated gate bipolar transistor (IGBT) applications, ensuring fast turn-off and turn-on of external switching transistors for maximum efficiency. For design flexibility, the new ISOdriver devices are available in high-side/low-side and dual driver versions. The high-side/low-side versions have built-in protection against... (read more)
Browse Telemetry Receivers and Telemetry Transmitters Datasheets for Silicon Labs -
Advanced Power Electronics Corp. USA
IGBT's for Induction Heaters and Micro OvensFast Insulated Gate Bipolar Transistors (IGBTs) from Advanced Power Electronics Corp. provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. Features: High speed switching. Low saturation voltage. Industry standard TO-3P package. RoHS compliant (read more)
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M.S. Kennedy Corp.
4357 - 28 Amp, 3 Phase Motor Drive HybridThe MSK 4357 is a 28 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 500 volt rating. The output switches are Insulated Gate Bipolar Transistors (IGBT's) tailored for high switching speeds. The free-wheeling diodes are the new Fast Recovery Epitaxial Diodes (FRED's) to provide matched current capabilities with the IGBT's and are specified with excellent reverse recovery times at high current ratings. This new smart power motor drive hybrid is compatible with 5v CMOS or TTL logic... (read more)
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Aerovox Corp.
New Aerovox Line of IGBT Snubber to 3,000 VDCNew Bedford, MA, September 2, 2010 Aerovox Corp., a leading film capacitor manufacturer headquartered in New Bedford, MA, has launched a new line of IGBT Snubber Capacitors for high power applications to 3,000 VDC. These capacitors will be manufactured in our Ningbo, China facility and are built to IEC-61071 standards. All units are designated CE. This comprehensive line of IGBT (Insulated Gate Bipolar Transistors) film capacitors is designed for use in high power converters such as AC and DC... (read more)
Browse Power Capacitors Datasheets for Aerovox Corp. -
SSD Drives, a Division of Parker Hannifin Corp.
Grid Tie Inverter system from ParkerThe Parker AC890PX series offers a self-contained refrigerant cooling system, increased drive power density with better environmental protection, higher ambient temperature tolerance, and higher reliability due to less thermal cycling of IGBTs (Insulated-Gate Bipolar Transistors). Learn more about our Advanced Cooled Free-Standing Grid Tie Inverter Systems (330-1500KW). By using Parker's Advanced Cooling technology, the high power AC890PX grid tie inverter offers the highest power density... (read more)
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Mouser Electronics, Inc.
Infineon High Speed Trench & Fieldstop IGBTsInfineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come... (read more)
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Mouser Electronics, Inc.
Fairchild Semiconductor 600V Field Stop IGBTsFairchild Semiconductor's FGH60N60SMD and FGH40N60SMD Series 600V Field Stop IGBTs offer the most ideal performance for Solar Inverters, UPS, SMPS, IH, and PFC applications in which low conduction and switching losses are essential. Fairchild Semiconductor's FGH60N60SMD and FGH40N60SMD Series 600V Field Stop IGBTs have 60A and 40A collector current ratings, respectively. Both IGBT Series offer a maximum junction temperature of 175ºC, a positive temperature co-efficient for easy parallel... (read more)
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Mitsubishi Electric Power Products, Inc.
Double Conversion UPS System in Single Phaseperformance Insulated Gate Bipolar Transistors (IGBT). Mitsubishi utilized their IGBT market expertise by incorporating IGBT technology in the converter and inverter sections of the 7011A Series. These advanced, high performance transistors provide a variety of intelligent features, including: Large power capabilities. Low control power consumption. High speed switching. Generator compatible. Low input current THD. Low audible noise... (read more)
Browse Uninterruptible Power Supplies (UPS) Datasheets for Mitsubishi Electric Power Products, Inc.
Parts by Number for Insulated Gate Bipolar Transistor Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| APT50GS60BRDQ2G | Avnet Express | Microsemi | IGBT Chip | INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB |
| APT15GP60BDQ1G | Avnet Express | Microsemi | Not Provided | INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI |
| IRGB430UD2 | Amazon | American Microsemiconductor | Industrial & Scientific | IRGB430UD2 |
| 1MBH60-100 | Amazon | American Microsemiconductor | Industrial & Scientific | 1MBH60-100 |
| APT25GT120BRG | Avnet Express | Microsemi | IGBT Chip | INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING |
Conduct Research Top
Power control is provided by high-power devices and their drive circuits. A variety of power devices are used, including bipolar and MOSFET transistors, insulated-gate bipolar transistors (IGBTs), and MOS-controlled thyristors. MOS-gated devices increasingly are favored. The ability to switch both...
...this article was originally published is in AC technology. The dominant method of AC control is by PWM inverters, particularly with the advent of the high speed Insulated Gate Bipolar Transistors (IGBTs). This will be the only drives technology to be considered in this revisited analysis...
...in the use of these devices. Signal. Output. 8. Processing. Drive. in power-related fields like wind and solar generation,. Circuit. Circuit. CATHODE. UVLOHYS. 3. PD. 6 VO. two markets that are expected to grow well into the. 6. future. Power semiconductors such as Insulated Gate...
...in a 125-mil-package and supplies dc voltage for driving field-effect transistors (FETs) and/or insulated gate bipolar transistors (IGBTs). The 52465 phototransistor optocoupler comes in a 95-mil-square package size and has an LED and a phototransistor that provides optical isolation. Both components can...
...driver is normally in the form of a power transistor. This can be a bipolar transistor, MOSFET or an Insulated Gate Bipolar Transistor (IGBT). In some small Brushless DC motor or stepper motor applications, the MOSFET driver can be used to directly drive the motor. For this application note, though...
...speeds up to 1 MHz at high voltage and current. The consensus is that such devices will become the preferred power switch for applications demanding over 500-V withstand, and possibly for those up to 1,000 V or more. IGBTs: Insulated-gate bipolar transistors (IGBT) combine the strengths of MOSFET...
...for natural convection (low pin density) can cool 2 W within a temperature rise of 40 C on its base. Thermal resistance here is 20.05 C/W. Pin-fin heat sinks are also used to cool IGBTs (insulated gate bipolar transistors) in impingement cooling. A heat sink with a 5 x 5-in. footprint and a total height...
...employing the technique. The "bridgeless" label comes from the absence of a traditional rectifier bridge in the circuit. The new design employs IGBTs (insulated-gate bipolar transistors) in a manner that eliminates the need for bulky inductors and capacitors that would otherwise be required in the input...
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6. insulated gate bipolar transistor (IGBT) technology, creates the variable voltage and frequency. output that will control the motor's speed. A microprocessor in the VFD, with programming. resident in firmware, governs the overal operation...
...turns off. Special circuitry, usually requiring another circuit board and associated wiring, controls this switching. Bipolar transistor technology began superceding SCRs in drives in the mid-1970s. In the early 1990s, those gave way to using insulated-gate bipolar-transistor (IGBT) technology...
Engineering Web Search: Insulated Gate Bipolar Transistor Top
Transistor - Wikipedia, the free encyclopedia
5.1 Bipolar junction transistor 5.2 Field-effect transistor Transistor From Wikipedia, the free encyclopedia
Field-effect transistor - Wikipedia, the free encyclopedia
The IGBT (insulated-gate bipolar transistor) is a device for power control.
Parametric Search | Microsemi
Home ? products ? parametric search ? Discrete Power and Small Signal Products ? IGBT ? Insulated Gate Bipolar Transistor - Resonant Mode - Combi
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Parametric Search | Microsemi
Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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IGBT - Insulated Gate Bipolar Transistor - Semiconductors...
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Allied Electronics ? Electronic Parts and Components...
IGBT - Insulated Gate Bipolar Transistor Transistor, Array Transistor, Bipolar Transistor, Darlington
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Insulated-Gate Transistor - What does IGT stand for? Acronyms...
insulated conductor Insulated Conductor Rotation Insulated Diesel Advanced Combustion System Insulated gate bipolar transistor Insulated gate bipolar
IGBT - Insulated Gate Bipolar Transistors :: Joliet...
limitations of Power Bipolar Transistor and Power MOSFET. Such the device is know as the Insulated Gate Bipolar Transistor (IGBT). This device has
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insulated-gate bipolar transistor (IGBT) | JEDEC
insulated-gate bipolar transistor (IGBT)
Insulated gate bipolar transistor invention
Insulated gate bipolar transistor USPTO Application #: 20070080407 Title: Insulated gate bipolar transistor
