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Products/Services for Pnp Transistor Analysis

  • Bipolar RF Transistors-Image
    Bipolar RF Transistors - (47 companies)
    By contrast, PNP is a BJT arrangement in which the emitter and the collector are made of P-type material and the base is made of N-type material. In terms of packaging, bipolar RF transistors are available in small outline (SO), transistor outline... Search by Specification | Learn More
  • RF Transistors-Image
    RF Transistors - (95 companies)
    ...supply and are used mainly for driver or power amplification applications. Pseudomorphic high electron mobility transistors (PHEMTs) are used mainly in wireless devices and satellite communication systems. Selecting RF transistors requires an analysis... Search by Specification | Learn More
  • Darlington Transistors-Image
    Darlington Transistors - (55 companies)
    ...emitter voltages. Sidney Darlington, an engineer at Bell Laboratories in the 1950s, is credited with first combing two transistors on a single chip. Selecting Darlington transistors requires an analysis of performance specifications. The common emitter... Search by Specification | Learn More
  • Finite Element <B>Analysis</B> Software-Image
    Finite Element Analysis Software - (77 companies)
    Finite element analysis software (FEA) uses a numerical technique to model and analyze complex structures by solving boundary-value problems. The structure to be analyzed is divided into points (elements) that make a grid called a mesh. Finite... Learn More
  • Statistical <B>Analysis</B> Software-Image
    Statistical Analysis Software - (61 companies)
    Statistical analysis software analyzes data to make predictions using statistical methods. It can be used to solve manufacturing problems, develop efficient industrial processes, or to make breakthrough discoveries. Statistical analysis software... Learn More
  • Image Analysis Software - (258 companies)
    Image analysis software is used to enhance, identify or quantify features in an image by breaking down or applying digital image filters. Image analysis software is used to enhance, identify, or quantify features in an image by breaking down... Learn More
  • Thermal Analysis Software - (22 companies)
    Thermal analysis software is used for design and analysis of transient and steady state heat transfer processes. Thermal analysis software is used for design and analysis of linear and non-linear, transient and steady state heat transfer processes... Learn More
  • Bus Analysis Software - (12 companies)
    Bus analysis software is used to analyze, manage, and interpret data from one or more computer buses. Most applications provide features such as real-time protocol checks, performance statistics, data transfers, latency monitoring, process... Learn More
  • Engineering Analysis Software - (640 companies)
    Engineering analysis software is designed to model, analyze, and predict responses and interactions for applications such as materials, structures, chemical and biological processes, electronic system performance, etc. Engineering analysis software... Learn More
  • Environmental Testing and Analysis Services - (943 companies)
    ...testing services. Soil testing may require the analysis of samples from multiple locations and depths. Environmental testing services determine soil acidity and soil alkalinity (pH), as well as levels of plant nutrients such as nitrogen (N... Search by Specification | Learn More
  • Thermal Management Design and Analysis Services - (110 companies)
    Thermal management design and analysis services perform tests and redesigns around thermal dissipation issues. Thermal management design and analysis services perform tests and redesigns around thermal analysis, heat analysis, heat management... Search by Specification | Learn More
  • Failure Mode and Effects Analysis (FMEA) Software - (15 companies)
    Failure mode and effects analysis (FMEA) software is used to track trends, generate statistics such as mean time between failure (MTBF), and determine the root causes of field failures (usually for products covered by a manufacturer's warranty... Learn More
  • Insulated Gate Bipolar Transistors (IGBT) - (95 companies)
    Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching... Search by Specification | Learn More
  • Transistors - (528 companies)
    ...and the outlet for the larger electrical supply. A simple transistor indicating its three main components. Image Credit: Technology Student. NPN and PNP are the two standard types of transistors. The letters refer to the order of semiconductor layers which... Search by Specification | Learn More
  • Power Bipolar Transistors - (84 companies)
    Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. There are two polarities available: PNP and NPN. PNP devices consist of an n-type layer... Search by Specification | Learn More
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Product News for Pnp Transistor Analysis

  • NPN and <B>PNP</B> Monolithic Dual Transistors-Image
    Linear Integrated Systems, Inc.
    NPN and PNP Monolithic Dual Transistors

    LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Features: Low Offset/Tight Matching Monolithic Dual (0.5 to 3mV versions). High Gain (100 to 400 Beta versions). Tightly Matched Monolithic Dual (1-15mV versions). High Breakdown Voltage (25 to 60 Volt versions). Low Capacitance (cob=2pf). Designed for Low Offset, High Gain, Low drift amplification. Available in Surface Mount SOIC 8 lead and SOT23 6 lead packages. Also available in Tested Die, PDIP 8, TO-71 6, and TO-78 6 lead... (read more)

    Browse Small-Signal Bipolar Transistors (BJT) Datasheets for Linear Integrated Systems, Inc.
  • Bipolar Junction <B>Transistor</B> (BJT)-Image
    American Microsemiconductor, Inc.
    Bipolar Junction Transistor (BJT)

    Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)

    Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc.
  • Bipolar Power RF Transistors (NPN or <B>PNP</B>)-Image
    American Microsemiconductor, Inc.
    Bipolar Power RF Transistors (NPN or PNP)

    Bipolar Power RF Transistors (NPN or PNP) from AMS. These transistors are avaiable in several packages: Stud package, Flange package, Hermetic package, etc. American Microsemiconductor now supplies direct replacements for MOTOROLA, PHILIPS, ST MICRO. Quick Links: Transistor Products store and data sheets... Bipolar Transistors. Silicon NPN Power Transistors. Silicon NPN Low-Power Transistors. Germanium PNP Low-Power Transistors. Silicon PNP Low-Power. Germanium PNP Power Transistors. Germanium... (read more)

    Browse RF Transistors Datasheets for American Microsemiconductor, Inc.
  • Series 18 NPN or <B>PNP</B> Shaft Rotation Speed Sensors-Image
    Electro-Sensors, Inc.
    Series 18 NPN or PNP Shaft Rotation Speed Sensors

    available. Single channel or quadrature signaling. NPN or PNP transistor outputs available. 4 housing options. Rugged, industrial duty 18mm stainless steel sensor housing. All sensors are epoxy potted and are liquid and dust-tight. View our product catalog here. (read more)

    Browse Magnetic Speed Sensors Datasheets for Electro-Sensors, Inc.
  • VHF-Band Pulsed Power <B>Transistor</B>-Image
    Integra Technologies, Inc.
    VHF-Band Pulsed Power Transistor

    The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth... (read more)

    Browse Transistors Datasheets for Integra Technologies, Inc.
  • ILD0506EL350 High Power Pulsed <B>Transistor</B>-Image
    Integra Technologies, Inc.
    ILD0506EL350 High Power Pulsed Transistor

    Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating from 480 MHz to 610 MHz. Operating at a pulse width of 15ms with a duty factor of 33%, this push-pull MOSFET device supplies a minimum of 350 watts of peak pulse power across the instantaneous operating bandwidth of 480-610 MHz. Maximum reliability is achieved through all-gold metal contacts... (read more)

    Browse Transistors Datasheets for Integra Technologies, Inc.
  • ILD2735M120 High Power Pulsed <B>Transistor</B>-Image
    Integra Technologies, Inc.
    ILD2735M120 High Power Pulsed Transistor

    Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010. Maximum reliability is achieved through... (read more)

    Browse Transistors Datasheets for Integra Technologies, Inc.
  • ILD2731M200 High Power Pulsed <B>Transistor</B>-Image
    Integra Technologies, Inc.
    ILD2731M200 High Power Pulsed Transistor

    Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. The high power... (read more)

    Browse Transistors Datasheets for Integra Technologies, Inc.
  • Freescale MRFE6VP8600H RF Power <B>Transistor</B>-Image
    Avnet Express
    Freescale MRFE6VP8600H RF Power Transistor

    The MRFE6VP8600, designed for UHF broadcast & industrial designs, is the latest addition to Freescale's portfolio of rugged RF transistors. Operating from 470 - 860 MHz, this 50V LDMOS device is capable of 600W peak power while able to withstand greater than 65:1 VSWR. The MRFE6VP8600 is a breakthrough RF Power device that brings levels of power and ruggedness never before seen in the broadcast industry. Delivers 125W Avg. DVB-T (8k OFDM) output power at 50V. Capable of handling >65:1... (read more)

  • Failure <B>Analyses</B>-Image
    ANALYZE Inc.
    Failure Analyses

    ANALYZE has implemented a time-tested approach to failure and root causes analyses. While the causes of product failure are varied, the problem solving process by which they are identified and understood is a series of well-defined steps: Discovery or Information Gathering. Define Problem. Establish Hypotheses to Explain Real Life Observations. Design an Experimental Approach to Acquire Missing Information. Test Hypotheses to Narrow Focus on Most Likely Cause(s). Communication and Feedback... (read more)

    Browse Material Testing Services Datasheets for ANALYZE Inc.
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Engineering Web Search: Pnp Transistor Analysis

Bipolar junction transistor - Wikipedia, the free encyclopedia
2.2 PNP 2.3 Heterojunction bipolar transistor PNP NPN Schematic symbols for PNP- and NPN-type BJTs.

Electronic component - Wikipedia, the free encyclopedia
However electronic engineers performing circuit analysis use a more restrictive definition of passivity.

SPICE - a brief overview
Circuit (.TF analysis and .DC Sweep) 5.2 HSpice example (.TF analysis and .DC Sweep) 5.3 Mutual Inductor (Transformer;Transient analysis) 5.3 Ideal

a AN-397 APPLICATION NOTE
The substrate Analysis of a Digital Pin versus a Supply Pin (V voltage rise actively biases the second parasitic SS) transistor into conduction.
See Analog Devices, Inc. Information

Military/Aerospace | Other Products | Analog Devices
Chemical Analysis Weigh Scales Environmental Monitors
See Analog Devices, Inc. Information

Analysis of Parasitic PNP Bipolar Transistor Mitigation Using...
Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology

Analysis of the New Latchup Model for Deep Sub-micron...
Analysis of the New Latchup Model for Deep Sub-micron Integrated Circuits

The Devices Jan M. Rabaey Digital Integrated Circuits Devices...
Integrated Circuits Devices ? Prentice Hall 1995 Models for Manual Analysis I I D = IS(eVD/T ? 1) D + + + VD VD V ? Don ? ? (a) Ideal diode model (b)

Chapter 5 Bipolar Amplifiers EE105 - Spring 2007 5.1 General...
General Considerations Microelectronic Devices and 5.2 Operating Point Analysis and Design Circuits 5.3 Bipolar Amplifier Topologies 5.4 Summary and

MAX6654 1&deg;C Accurate Remote/Local Temperature Sensor with...

See Maxim Integrated Products, Inc. Information

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