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RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Supplier: TriQuint Semiconductor, Inc.
Description: ): 9 W at 6 GHz Lead-free and RoHS compliant Low thermal resistance package Biasing Instructions Soldering Recommendations Typical Applications Wideband and Narrowband Defense and Commercial Communication Systems General Purpose RF Power Cellular Infrastructure Test
- Transistor Type / Technology: HEMT
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 280 watts of power at 1030/1090 MHz. All devices are 100% screened for large signal RF
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Supplier: Newark / element14
Description: RF Bipolar Transistor; Power Dissipation Pd:350mW; RF Transistor Case:TO-92; Leaded Process Compatible:No; Package / Case:TO-92; Peak Reflow Compatible (260 C):No
- Transistor Type / Technology: Bipolar RF Transistors
- Package Type: TO-92
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Supplier: American Microsemiconductor, Inc.
Description: Ge PNP Power BJT, Transistors
- Transistor Type / Technology: General Purpose BJT, Power BJT Transistors
- Polarity: PNP
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Newark
Description: RF Bipolar Transistor; Power Dissipation, Pd:0.625W
- Transistor Type / Technology: Bipolar RF Transistors
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Supplier: Avago Technologies
Description: 16V medium power bipolar transistor. The AT-640XX is designed for use in wideband amplifier and oscillator applications in the VHF, UHF, and microwave frequencies. P1dB = 28dBm at 16V, 110mA (2 GHz)
- Polarity: Other, NPN
- Transistor Grade / Operating Range: Other
- Package Type: Other
- Packing Method: Bulk Pack
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Supplier: Comdel, Inc.
Description: by reducing power gain changes due to plasma impedance fluctuations. S-Technology helps eliminate headaches from transmission line length, mismatch conditions and process reliability issues. Applications: The CPS series is designed to meet the performance demand in RF-driven plasma systems
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Supplier: Emhiser Research, Inc.
Description: amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom RF high power
- Amplifier Type: Power Amplifier
- Package Type: Connectorized
- RF Connector: Type N
- Nominal Impedance: 50 Ohms
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Supplier: Jameco Electronics
Description: TRANSISTOR,MJE3055T,NPN POWER
- Transistor Type / Technology: Bipolar RF Transistors
- Polarity: NPN
- Package Type: TO-220
Featured Products Top
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Avnet Express
Freescale MRFE6VP8600H RF Power TransistorThe MRFE6VP8600, designed for UHF broadcast & industrial designs, is the latest addition to Freescale's portfolio of rugged RF transistors. Operating from 470 - 860 MHz, this 50V LDMOS device is capable of 600W peak power while able to withstand greater than 65:1 VSWR. The MRFE6VP8600 is a breakthrough RF Power device that brings levels of power and ruggedness never before seen in the broadcast industry. Delivers 125W Avg. DVB-T (8k OFDM) output power at 50V. Capable of handling >65:1... (read more)
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Integra Technologies, Inc.
VDMOS Common Source RF Power TransistorsIntegra's line of VDMOS common source RF power transistor products boast unparalleled performance in the industry. They are designed for rugged operation in various broadband communication and broadcast applications. All gold refractory metal contact on silicon chips and the associated gold wire bonds offer superior reliability. Both hermetic, as well as epoxy sealed packages are available. Products come in discrete form, unmatched and/or partially matched as well as fully matched 50 ohm (read more)
Browse RF Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
Highly Efficient 18W GaN RF Power TransistorT1G6001528-Q3 - 18W, 28V, DC-6 GHz, GaN RF Power Transistor. The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Features... (read more)
Browse Transistors Datasheets for TriQuint Semiconductor, Inc. -
American Microsemiconductor, Inc.
Bipolar Power RF Transistors (NPN or PNP)Bipolar Power RF Transistors (NPN or PNP) from AMS. These transistors are avaiable in several packages: Stud package, Flange package, Hermetic package, etc. American Microsemiconductor now supplies direct replacements for MOTOROLA, PHILIPS, ST MICRO. Quick Links: Transistor Products store and data sheets... Bipolar Transistors. Silicon NPN Power Transistors. Silicon NPN Low-Power Transistors. Germanium PNP Low-Power Transistors. Silicon PNP Low-Power. Germanium PNP Power Transistors. Germanium... (read more)
Browse RF Transistors Datasheets for American Microsemiconductor, Inc. -
Integra Technologies, Inc.
VHF-Band Pulsed Power TransistorThe high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth (read more)
Browse Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
55W GaN Transistor, X-Band 2W PA, GPS-SDARS DiplexTriQuint Semiconductor is featuring three new innovative RF solutions designed to bring greater system performance and efficiency to a variety of markets and applications including radar systems, PtP radio and automotive. 55W GaN RF Power Transistor. T1G4005528-FS Features. Frequency range: DC - 3.5 GHz. Linear gain: >15dB at 3.5 GHz (best in class). Operating voltage: 28V. Output power (P3dB): 55W at 3.5 GHz. Lead-free and RoHS compliant. · Package: 9.7x5.8mm ceramic air cavity flat lead... (read more)
Browse RF Transmitters Datasheets for TriQuint Semiconductor, Inc. -
Avago Technologies
AVT-5x4689 Broadband RF Gain Blocks for 50-6000MHzoperating in this broad frequency range. The AVT-55689 and AVT-54689 gain blocks leverage Indium Gallium Phosphate (InGaP) Hetero-junction Bipolar Transistor (HBT) process to achieve state-of-the-art reliability, temperature stability and performance consistency. The devices are each internally matched to 50 ohms, eliminating the need for additional radio frequency (RF) matching components. The cost-efficient devices' broadband gain is also ideal for cellular infrastructure designs that require... (read more)
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Radyne - An Inductotherm Group Company
Induction Power SuppliesRadyne delivers the very best induction in induction power supplies in the industry. From 20Hz SCR to 200 kHz IGBT units, from 100kHz to 450KHz, 800kHz MOSFET Systems through to 27mHz Transistor RF Power Supplies Radyne has the right power for your application. With more than 50 years experience in the design and manufacture of solid-state induction power supplies, Radyne utilizes SCR, IGBT, MOSFET, and Standard N and P type Transistor equipment. Crafted with precision, Radyne induction power... (read more)
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Integra Technologies, Inc.
New 50ohm Matched Mini-Power Amplifieroperation it can be used to supply a minimum of 130 watts of peak pulse power over the instantaneous frequency range of 2.7-3.1 GHz. All devices are 100% screened for large signal RF parameters. Sampling now. (read more)
Browse RF Amplifiers Datasheets for Integra Technologies, Inc. -
Skyworks Solutions, Inc.
Skyworks Offers High Performance, Low Power LNAsportfolio includes amplifiers, attenuators, detectors, circulators, isolators, diodes, directional couplers, front-end modules, hybrids, infrastructure RF subsystems, mixers/demodulators, phase shifters, PLLs/synthesizers/VCOs, power dividers/combiners, receivers, switches and technical ceramics. Headquartered in Woburn, Mass., Skyworks is worldwide with engineering, manufacturing, sales and service facilities throughout Asia, Europe and North America. For more information, please visit... (read more)
Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc.
Parts by Number for RF power transistor Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF POWER TRANSISTOR | ASAP Semiconductor | SARONIX | Not Provided | 984l |
| RF POWER TRANSISTOR | E-Electronics | Not Provided | Not Provided | WP90222 L3 14 PIN DIP |
| RF1310N | E-Electronics | Not Provided | Not Provided | TRANSISTOR RF1310N POWER MOSFET TUBE PKG APN 1AB082340004 DC 07 |
| PD84006-E | Avnet Express | STMicroelectronics | Transistor | POWER R.F. |
| PD54008TR-E | Avnet Express | STMicroelectronics | Transistor | RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY,TR |
Conduct Research Top
...be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched...
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs. Books24x7 EngineeringProTM from Books24x7...
...through 6 GHz have been verified with a 0.35 µm production-ready SOI CMOS. technology. ited battery life. One approach to meeting this. challenge is to create a reduced power RF sys-. Gallium arsenide (GaAs) has been used. extensively for 2 to 6 GHz RF applica-. tions due to its intrinsically...
Leading semiconductor producers have recently conceded that wafer level RF measurements are acutely needed to develop and produce advanced ICs. To a certain degree, this flies in the face of the 2003 recommendations by the ITRS Technical Working Group for Modeling and Simulation, which states...
...resulting in the integration of high-performance analog and RF circuits with dense CMOS logic. The performance and integration capability of SiGe devices has enabled the production of a wide range of new products for wireless and wired communications, high-speed-test, and disk-drive applications. SiGe...
...of switch-mode supplies to reduce RF interference. Slowing rise and fall times, of course, proportionally boosts the power lost in the transistor switch during transitions. New power convertor topologies avoid this energy loss typically through use of constant-frequency resonant switching, aka soft switching...
...models. PAD117 and PAD127 as this feature is unnecessary for RIRO designs.). Let's look at an application (Figure 2) where bipolar system power supplies. are available to power the small signal stages of the amplifier but the output. stage is powered from a single high power supply. -15V. RO. RF. +48V...
...in Figure 1. Highly integrated RF compact, high-performance Ka-band design utilizes. modules shown include a transmit module combining InGaP TriQuint's 0.15-m PHEMT transistor technology and 50-m. HBT PA, SAW filters and duplexers, power detectors and thick substrates with slot vias for compact...
...depending on the output loading. GAIN. POWER STAGE. STAGE. +VCC. PUSH. RL. -VCC. PULL. OP-AMP WITH PUSH-PULL OUTPUT. FIGURE 1. Lo. POWER. TRANSFORMER. Vo. +. PWM. CL. LL. V. Q1. IN. &. RF. RL. Co. DC. PULL. DRIVER. A1. RL. -. PUSH. RL. Rin. V. IN. COMBINATION AMPLIFIER, PUSH PHASE SWITCHING PULL...
CommsDesign. EDA. Embedded Internet. Industrial Control. MCU. Medical. Memory. Military & Aerospace. Planet Analog. Power Management. Programmable Logic. RF & Microwave. Signal Processing. Smart Energy. Test & Measurement. Design Tools. Reference Designs. Development Kits. Source Code. Products. Product...
Engineering Web Search: RF power transistor Top
Transistor - Wikipedia, the free encyclopedia
Because the controlled (output) power can be much more than the controlling (input) power, a transistor can amplify a signal.
MOSFET - Wikipedia, the free encyclopedia
Two power MOSFETs in the surface-mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in
RF Micro Devices :: RF Solutions & Wireless...
power High power RF, high-frequency point-to-point RF chipsets, high-reliability signal sources, and modules.
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RF Transistors RF Power RF Power Transistor Bipolar/HBT RF Power Transistor GaAs RF Power Transistor GaN
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RF wideband transistors :: NXP Semiconductors
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Power Transistor
Power Transistor Companies - 113 Products - 38 Power Transistor Displaying 1-33 of Total 33 Products Found
Corrigan Article.qxd
Media, LLC CMOS SWITCHES CMOS Switches Offer High Performance in Low Power, Wideband Applications By Theresa Corrigan and Ray Goggin Analog Devices,
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Analog Devices? High-Performance RF Driver Amplifier Reduces...
Power Management References RF / IF ICs RF/IF Amplifiers RF/IF Attenuators/VGA/Filters
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