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About Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Polarity is important to specify when searching for Power MOSFET. Choices for polarity include N-channel, P-channel, and complementary. The operating mode can be depletion, or enhancement. MOSFETs operating in depletion mode can have its channel decreased or increased by an appropriate gate voltage. MOSFETs operating in enhancement mode can only increased its channel by an appropriate gate voltage. Power MOSFET types include LDMOSFET (Lateral Double Diffused MOSFET), dual gate MOSFET (A MOSFET with two input gates), VMOSFET (V-grooved MOSFET), UMOSFET (U-shaped trench MOSFET), and DMOSFET (Diffusion MOSFET). Choices for production status include full production, discontinued, in development, new product or historical.
Important performance specifications to consider when searching for power MOSFET include V (BR)DSS, rDS(on), IDSS, QG, PD, and TJ. V (BR)DSS is the drain-source breakdown voltage. It is the maximum drain to source voltage before breakdown with the gate grounded. RDS(on) is the ohmic resistance. IDSS is the drain saturation current, the maximum drain saturation current. QG is the gate charge. PD is the power dissipation is the total power consumption of the device. It is generally expressed in watts or milliwatts. TJ is the full-required range of ambient operating temperature. Choices for packaging for Power MOSFET include TO types, SO types, SOT types, and DPAK, MPAK, MFPAK, CMPAK, CMFPAK, LDPAK, RFPAK, SPAK, and UPAK. The packaging method can be tape reel, rail, bulk pack, tube, and tray. Material choices include silicon, germanium, GaAs, and SiGe. Choices for power MOSFET grade include commercial, industrial, and military. In a commercial transistor, the temperature range supported, and the mechanical and electrical specifications of the device are suitable for commercial applications. In an industrial transistor, the temperature range supported, and the mechanical and electrical specifications of the device are suitable for general industrial applications, such s aeronautical, automotive, medical, and others. In a military transistor, the temperature range supported, and the mechanical and electrical specifications of the device satisfy military standards. The number of transistors in the chip is also important to consider.
Products & Services Related to Power MOSFET
Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Darlington Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.
Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Power Bipolar Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
RF MOSFET Transistors
MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.
RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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